IMBF170R1K0M1
CoolSiC™ 1700V SiC Trench MOSFET Electrical Characteristics 3.3 Switching characteristics Table 6 3Switching characteristics, Inductive load Parameter Symbol Conditions Value Unit min. typ. max. MOSFET Characteristics, T vj = 25°C Turn-on delay time t d(on) V DD = 1000V, I D = 1A, V GS = 0/12V, R G,ext = 22Ω, Lσ = 40nH, diode: …